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1

Reliable Operation for 14500 h of a Wavelength-Stabilized Diode Laser System on a Microoptical Bench at 671 nm

Sumpf, B., Maiwald, M., Muller, A., Ginolas, A., Hausler, K., Erbert, G., Trankle, G.

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Année:

2012

Langue:

english

Fichier:

PDF, 808 KB

english, 2012

2

Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm

Maiwald, M., Ginolas, A., Muller, A., Sahm, A., Sumpf, B., Erbert, G., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Année:

2008

Langue:

english

Fichier:

PDF, 216 KB

english, 2008

3

Miniaturized Tunable External Cavity Diode Laser with Single-Mode Operation and a Narrow Linewidth at 633 nm

Bawamia, Ahmad Ibrahim, Blume, Gunnar, Eppich, Bernd, Ginolas, Arnim, Spießerger, Stefan, Thomas, Madlen, Sumpf, Bernd, Erbert, Götz

Journal:

IEEE Photonics Technology Letters

Année:

2011

Langue:

english

Fichier:

PDF, 314 KB

english, 2011

4

Joule-Class 940-nm Diode Laser Bars for Millisecond Pulse Applications

Crump, P., Frevert, C., Ginolas, A., Knigge, S., Maabdorf, A., Lotz, J., Fassbender, W., Neukum, J., Korner, J., Topfer, T., Pranovich, A., Divoky, M., Lucianetti, A., Mocek, T., Ertel, K., De Vido, M

Journal:

IEEE Photonics Technology Letters

Année:

2015

Langue:

english

Fichier:

PDF, 686 KB

english, 2015

5

Wavelength stabilized high pulse power 48 emitter laser bars for automotive LiDAR application

Klehr, Andreas, Liero, Armin, Christopher, Heike, Wenzel, Hans, Maassdorf, Andre, Della Casa, Pietro, Fricke, Joerg, Ginolas, Arnim, Knigge, Andrea

Journal:

Semiconductor Science and Technology

Année:

2020

Fichier:

PDF, 2.11 MB

2020

6

650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ginolas, A., Hausler, K., Pittroff, W., Ressel, P., Erbert, G., Weyers, M., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Année:

2007

Langue:

english

Fichier:

PDF, 134 KB

english, 2007

7

High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

Fricke, J., Bugge, F., Ginolas, A., John, W., Klehr, A., Matalla, M., Ressel, P., Wenzel, H., Erbert, G.

Journal:

IEEE Photonics Technology Letters

Année:

2010

Langue:

english

Fichier:

PDF, 323 KB

english, 2010

8

Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

Maiwald, Martin, Fricke, Jörg, Ginolas, Arnim, Pohl, Johannes, Sumpf, Bernd, Erbert, Götz, Tränkle, Günther

Journal:

Laser & Photonics Reviews

Année:

2013

Langue:

english

Fichier:

PDF, 736 KB

english, 2013

9

High power multichip modules employing the planar embedding technique and microchannel water heat sinks

Hahn, R., Kamp, A., Ginolas, A., Schmidt, M., Wolf, J., Glaw, V., Topper, M., Ehrmann, O., Reichl, H.

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

Année:

1997

Langue:

english

Fichier:

PDF, 349 KB

english, 1997

10

[IEEE 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - Kohala Coast, HI, USA ()] 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - 3 W - Broad Area Lasers and 12 W - Bars with Conversion Efficiencies up to 40% at 650 nm

Sumpf, B., Zorn, M., Staske, R., Fricke, J., Ressel, P., Ginolas, A., Paschke, K., Erbert, G., Weyers, M., Trankle, G.

Année:

2006

Langue:

english

Fichier:

PDF, 178 KB

english, 2006

11

17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

Xiaozhuo Wang,, Erbert, G., Wenzel, H., Crump, P., Eppich, B., Knigge, S., Ressel, P., Ginolas, A., Maassdorf, A., Trankle, G.

Journal:

IEEE Photonics Technology Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2013

12

High-Power Distributed Feedback Lasers With Surface Gratings

Fricke, Jörg, Wenzel, Hans, Bugge, Frank, Brox, Olaf P., Ginolas, Arnim, John, Wilfred, Ressel, Peter, Weixelbaum, Leonhard, Erbert, Goetz

Journal:

IEEE Photonics Technology Letters

Année:

2012

Langue:

english

Fichier:

PDF, 617 KB

english, 2012

13

[IEEE 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC) - Kyoto, Japan (2010.09.26-2010.09.30)] 22nd IEEE International Semiconductor Laser Conference - Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm

Fricke, J., Bugge, F., Ginolas, A., John, W., Klehr, A., Matalla, M., Ressel, P., Wenzel, H., Erbert, G.

Année:

2010

Langue:

english

Fichier:

PDF, 284 KB

english, 2010

14

[IEEE 2008 IEEE 21st International Semiconductor Laser Conference (ISLC) - Sorrento, Italy (2008.09.14-2008.09.18)] 2008 IEEE 21st International Semiconductor Laser Conference - High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays

Kettler, T., Posilovic, K., Fricke, J., Ressel, P., Ginolas, A., Pohl, U. W., Shchukin, V. A., Ledentsov, N.N., Bimberg, D., Jonsson, J., Weyers, M., Erbert, G., Trankle, G.

Année:

2008

Langue:

english

Fichier:

PDF, 520 KB

english, 2008

15

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Sumpf, Bernd, Zorn, Martin, Staske, Ralf, Fricke, Jorg, Ressel, Peter, Ginolas, Arnim, Paschke, Katrin, Erbert, Gotz, Weyers, Markus, Trankle, Gunther

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 290 KB

english, 2007

16

[OSA CLEO: Science and Innovations - San Jose, California (2015..-..)] CLEO: 2015 - Low-temperature Optimized 940 nm Diode Laser Bars with 1.98 kW Peak Power at 203 K

Frevert, Carlo, Crump, Paul, Bugge, Frank, Knigge, Steffen, Ginolas, Arnim, Erbert, Götz

Année:

2015

Langue:

english

Fichier:

PDF, 560 KB

english, 2015

17

[IEEE 2015 IEEE Photonics Conference (IPC) - Reston, VA, USA (2015.10.4-2015.10.8)] 2015 IEEE Photonics Conference (IPC) - Joule-class 940 nm diode laser bars for millisecond pulse applications

Crump, P., Frevert, C., Ginolas, A., Knigge, S., Maassdorf, A., Lotz, J., Fassbender, W., Neukum, J., Korner, J., Topfer, T., Pranovich, A., Divoky, M., Lucianetti, A., Mocek, T., Ertel, K., De Vido,

Année:

2015

Langue:

english

Fichier:

PDF, 380 KB

english, 2015

18

High performance liquid cooled aluminium nitride heat sinks

Hahn, R., Glaw, V., Ginolas, A., Töpfer, M., Wittke, K., Reichl, H.

Journal:

Microelectronics International

Année:

1999

Langue:

english

Fichier:

PDF, 177 KB

english, 1999

19

Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm

Braune, Marcel, Maiwald, Martin, Eppich, Bernd, Brox, Olaf, Ginolas, Arnim, Sumpf, Bernd, Trankle, Gunther

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Année:

2017

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2017

20

Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability

Tawfieq, Mahmoud, Muller, Andre, Fricke, Jorg, Della Casa, Pietro, Ressel, Peter, Ginolas, Arnim, Feise, David, Sumpf, Bernd, Trankle, Gunther

Journal:

IEEE Photonics Technology Letters

Année:

2017

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2017

21

Novel High-Power, High Repetition Rate Laser Diode Pump Modules Suitable for High-Energy Class Laser Facilities

Hübner, Marko, Will, Ingo, Körner, Jörg, Reiter, Jürgen, Lenski, Mathias, Tümmler, Johannes, Hein, Joachim, Eppich, Bernd, Ginolas, Arnim, Crump, Paul

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 4.14 MB

english, 2019

22

Results from ITER vacuum vessel sector manufacturing development in Europe

L. Jones, J. Duhovnik, M. Ginola, J. Huttunen, K. Ioki, L. Junek, T. Löwer, U. Luconi, M. Pick, G.-P. Sanguinetti, M. Slovacek, Y. Utin

Journal:

Fusion Engineering and Design

Année:

2007

Langue:

english

Fichier:

PDF, 822 KB

english, 2007

23

Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, M. Weyers

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 512 KB

english, 2008

24

Transport and microscopic investigations on the electric-pulse-induced phase transition of VO2 films

J.S. Lee, M. Ortolani, A. Ginolas, Y.J. Chang, T.W. Noh, U. Schade

Journal:

Physica C: Superconductivity

Année:

2007

Langue:

english

Fichier:

PDF, 373 KB

english, 2007

25

Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers

Xiaozhuo Wang, Crump, P., Wenzel, H., Liero, A., Hoffmann, T., Pietrzak, A., Schultz, C.M., Klehr, A., Ginolas, A., Einfeldt, S., Bugge, F., Erbert, G., Trankle, G.

Journal:

IEEE Journal of Quantum Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 501 KB

english, 2010

26

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

Kettler, T., Posilovic, K., Karachinsky, L.Ya., Ressel, P., Ginolas, A., Fricke, J., Pohl, U.W., Shchukin, V.A., Ledentsov, N.N., Bimberg, D., Jonsson, J., Weyers, M., Erbert, G., Trankle, G.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 360 KB

english, 2009

27

SPIE Proceedings [SPIE SPIE LASE: Lasers and Applications in Science and Engineering - San Jose, CA (Saturday 24 January 2009)] Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VIII - Beam quality dependent SHG using edge-emitting lasers and a 50 mm bulk PPLN crystal

Uebernickel, Mirko, Powers, Peter E., Blume, Gunnar, Fiebig, Christian, Kaspari, Christian, Feise, David, Paschke, Katrin, Ginolas, Arnim, Güther, Reiner, Eppich, Bernd, Erbert, Götz

Année:

2009

Langue:

english

Fichier:

PDF, 363 KB

english, 2009

28

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Baltimore, Maryland, USA (Monday 29 April 2013)] Advanced Environmental, Chemical, and Biological Sensing Technologies X - Monolithic Y-branch dual wavelength DBR diode laser at 671nm for shifted excitation Raman difference spectroscopy

Maiwald, M., Fricke, J., Ginolas, A., Pohl, J., Sumpf, B., Erbert, G., Tränkle, G., Vo-Dinh, Tuan, Lieberman, Robert A., Gauglitz, Günter G.

Année:

2013

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2013

29

SPIE Proceedings [SPIE SPIE LASE: Lasers and Applications in Science and Engineering - San Jose, CA (Saturday 24 January 2009)] High-Power Diode Laser Technology and Applications VII - 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μm

Crump, P., Blume, G., Paschke, K., Staske, R., Pietrzak, A., Zeimer, U., Einfeldt, S., Ginolas, A., Bugge, F., Häusler, K., Ressel, P., Wenzel, H., Erbert, G., Zediker, Mark S.

Année:

2009

Langue:

english

Fichier:

PDF, 989 KB

english, 2009

30

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Fricke, J, Klehr, A, Brox, O, John, W, Ginolas, A, Ressel, P, Weixelbaum, L, Erbert, G

Journal:

Semiconductor Science and Technology

Année:

2013

Langue:

english

Fichier:

PDF, 576 KB

english, 2013

31

[IEEE 11th European Quantum Electronics Conference (CLEO/EQEC) - Munich, Germany (2009.06.14-2009.06.19)] CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference - Limitations to peak continuous wave power in high power broad area single emitter 980 nm diode lasers

Crump, P., Roder, C., Staske, R., Pietrzak, A., Pittroff, W., Ginolas, A., Fricke, J., Paschke, K., Bugge, F., Ressel, P., Wenzel, H., Erbert, G.

Année:

2009

Langue:

english

Fichier:

PDF, 176 KB

english, 2009

32

[IEEE 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC - Munich, Germany (2013.05.12-2013.05.16)] 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC - Monolithic Y-branch dual wavelength DBR diode laser at 671 nm for shifted excitation Raman difference spectroscopy

Maiwald, M., Fricke, J., Ginolas, A., Pohl, J., Sumpf, B., Erbert, G., Trankle, G.

Année:

2013

Langue:

english

Fichier:

PDF, 259 KB

english, 2013

33

[IEEE 2011 IEEE Photonics Conference (IPC) - Arlington, VA, USA (2011.10.9-2011.10.13)] IEEE Photonic Society 24th Annual Meeting - 56W optical output power at 970nm from a truncated tapered semiconductor optical amplifier

Wang, X., Wenzel, H., Eppich, B., Crump, P., Spreemann, M., Ginolas, A., Fricke, J., Bugge, F., Erbert, G., Trankle, G.

Année:

2011

Langue:

english

Fichier:

PDF, 282 KB

english, 2011

34

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Posilovic, K., Kettler, T., Shchukin, V. A., Ledentsov, N. N., Pohl, U. W., Bimberg, D., Fricke, J., Ginolas, A., Erbert, G., Tränkle, G., Jönsson, J., Weyers, M.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 430 KB

english, 2008

35

[IEEE 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - Munich, Germany (2007.06.17-2007.06.22)] 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - High-power hybrid integrated master-oscillator power-amplifier on micro-optical bench at 980-nm

Paschke, K., Dzionk, Chr., Fricke, J., Ginolas, A., Knauer, A., Maiwald, M., Ressel, P., Schwertfeger, S., Erbert, G.

Année:

2007

Langue:

english

Fichier:

PDF, 65 KB

english, 2007

36

[IEEE CLEO/Europe - IQEC 2007. European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - Munich (2007.06.17-2007.06.22)] 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference - High-power 980-nm monolithically integrated master-oscillator power-amplifier

Wenzel, H., Paschke, K., Brox, O., Bugge, F., Fricke, J., Ginolas, A., Knauer, A., Ressel, P., Erbert, G.

Année:

2007

Langue:

english

Fichier:

PDF, 606 KB

english, 2007

37

[IEEE Thirteenth Annual IEEE. Semiconductor Thermal Measurement and Management Symposium - Austin, TX, USA (28-30 Jan. 1997)] Thirteenth Annual IEEE. Semiconductor Thermal Measurement and Management Symposium - High power multichip modules employing the planar embedding technique and microchannel water heat sinks

Hahn, R., Kamp, A., Ginolas, A., Schmidt, M., Wolf, J., Glaw, V., Topper, M., Ehrmann, O., Reichl, H.

Année:

1997

Langue:

english

Fichier:

PDF, 1.09 MB

english, 1997

38

[IEEE CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - Munich, Germany (12-17 June 2005)] CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - 5.3 W CW high brightness 980-nm tapered diode lasers

Paschke, K., Sumpf, B., Dittmar, F., Erbert, G., Fricke, J., Ginolas, A., Dzionk, Ch., Knauer, A., Wenzel, H., Trankle, G.

Année:

2005

Langue:

english

Fichier:

PDF, 234 KB

english, 2005

39

[IEEE CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - Munich, Germany (12-17 June 2005)] CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005. - 10 W reliable operation of 100 μm stripe width broad area lasers at 930 nm with small vertical far field

Sumpf, B., Ginolas, A., Erbert, G., Knauer, A., Paschke, K., Pittroff, W., Staske, R., Trankle, G.

Année:

2005

Langue:

english

Fichier:

PDF, 227 KB

english, 2005

40

High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors

Wang, X, Erbert, G, Wenzel, H, Eppich, B, Crump, P, Ginolas, A, Fricke, J, Bugge, F, Spreemann, M, Tränkle, G

Journal:

Semiconductor Science and Technology

Année:

2012

Langue:

english

Fichier:

PDF, 507 KB

english, 2012

41

10 W continuous-wave monolithically integrated master-oscillator power-amplifier

Wenzel, H., Paschke, K., Brox, O., Bugge, F., Fricke, J., Ginolas, A., Knauer, A., Ressel, P., Erbert, G.

Journal:

Electronics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 138 KB

english, 2007

42

SPIE Proceedings [SPIE Lasers and Applications in Science and Engineering - San Jose, CA (Saturday 19 January 2008)] Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII - Rayleigh length dependent SHG conversion at 488nm using a monolithic DBR tapered diode laser

Blume, G., Uebernickel, M., Fiebig, C., Paschke, K., Ginolas, A., Eppich, B., Güther, R., Erbert, G., Powers, Peter E.

Année:

2008

Langue:

english

Fichier:

PDF, 407 KB

english, 2008

43

SPIE Proceedings [SPIE SPIE LASE - San Francisco, California, USA (Saturday 2 February 2013)] High-Power Diode Laser Technology and Applications XI - High power, high beam quality laser source with narrow, stable spectra based on truncated-tapered semiconductor amplifier

Wang, X., Erbert, G., Wenzel, H., Crump, P., Eppich, B., Knigge, S., Ressel, P., Ginolas, A., Maaßdorf, A., Tränkle, G., Zediker, Mark S.

Année:

2013

Langue:

english

Fichier:

PDF, 1.90 MB

english, 2013

44

SPIE Proceedings [SPIE SPIE LASE: Lasers and Applications in Science and Engineering - San Jose, CA (Saturday 24 January 2009)] High-Power Diode Laser Technology and Applications VII - Assessment of the limits to peak power of 1100nm broad area single emitter diode lasers under short pulse conditions

Wang, X., Crump, P., Pietrzak, A., Schultz, C., Klehr, A., Hoffmann, T., Liero, A., Ginolas, A., Einfeldt, S., Bugge, F., Erbert, G., Tränkle, G., Zediker, Mark S.

Année:

2009

Langue:

english

Fichier:

PDF, 949 KB

english, 2009

45

SPIE Proceedings [SPIE LASE - San Francisco, California (Saturday 23 January 2010)] High-Power Diode Laser Technology and Applications VIII - High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm

Jedrzejczyk, D., Brox, O., Bugge, F., Fricke, J., Ginolas, A., Paschke, K., Wenzel, H., Erbert, G., Zediker, Mark S.

Année:

2010

Langue:

english

Fichier:

PDF, 6.62 MB

english, 2010

46

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 13 February 2016)] Advances in Display Technologies VI - Master-oscillator power-amplifier in the red spectral range for holographic displays

Chien, Liang-Chy, Lee, Sin-Doo, Wu, Ming Hsien, Blume, G., Pohl, J., Feise, D., Wiedmann, J., Ressel, P., Eppich, B., Sahm, A., Ginolas, A., Nedow, O., Jendrzejewski, M., Johne, P., Hofmann, J., Schie

Année:

2016

Langue:

english

Fichier:

PDF, 522 KB

english, 2016

47

SPIE Proceedings [SPIE SPIE BiOS - San Francisco, California, United States (Saturday 1 February 2014)] Advanced Biomedical and Clinical Diagnostic Systems XII - Shifted excitation Raman difference spectroscopy using a dual-wavelength DBR diode laser at 671 nm

Vo-Dinh, Tuan, Mahadevan-Jansen, Anita, Grundfest, Warren S., Maiwald, M., Fricke, J., Ginolas, A., Pohl, J., Sumpf, B., Erbert, G., Tränkle, G.

Année:

2014

Langue:

english

Fichier:

PDF, 2.35 MB

english, 2014

48

SPIE Proceedings [SPIE SPIE LASE - San Francisco, California, United States (Saturday 13 February 2016)] High-Power Diode Laser Technology and Applications XIV - 940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K

Zediker, Mark S., Frevert, C., Bugge, F., Knigge, S., Ginolas, A., Erbert, G., Crump, P.

Année:

2016

Langue:

english

Fichier:

PDF, 778 KB

english, 2016

49

SPIE Proceedings [SPIE SPIE BiOS - San Francisco, California, United States (Saturday 7 February 2015)] Advanced Biomedical and Clinical Diagnostic and Surgical Guidance Systems XIII - Shifted excitation Raman difference spectroscopy using a dual-wavelength DBR diode laser at 785 nm

Mahadevan-Jansen, Anita, Vo-Dinh, Tuan, Grundfest, Warren S., Liu, Quan, Maiwald, M., Eppich, B., Fricke, J., Ginolas, A., Bugge, F., Klehr, A., Sumpf, B., Erbert, G., Tränkle, G.

Année:

2015

Langue:

english

Fichier:

PDF, 541 KB

english, 2015

50

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 21 January 2012)] Novel In-Plane Semiconductor Lasers XI - Continuously current-tunable, narrow line-width miniaturized external cavity diode laser at 633 nm

Sumpf, B., Belyanin, Alexey A., Smowton, Peter M., Bawamia, A., Blume, G., Eppich, B., Ginolas, A., Spießberger, S., Thomas, M., Erbert, G.

Année:

2012

Langue:

english

Fichier:

PDF, 1.93 MB

english, 2012